SI3459DV-T1-E3

Снят с производства
SI3459DV-T1-E3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 60V 2.2A 220mR TSOP Surface Mount
Производитель Vishay(Siliconix)
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel MOSFET, 60V Vdss, 2.2A continuous drain current, and 220mR maximum drain-source on-resistance. This surface mount component features a 6-TSOP package with dimensions of 3.05mm length, 1.65mm width, and 1mm height. Operating across a temperature range of -55°C to 150°C, it offers a maximum power dissipation of 2W. Key switching characteristics include an 8ns turn-on delay, 12ns fall time, and 23ns turn-off delay. This RoHS compliant, lead-free device is supplied in tape and reel packaging.
RoHS Compliant
Mount Surface Mount
Width 1.65mm
Height 1mm
Length 3.05mm
Series TrenchFET®
Weight 0.000705oz
Polarity P-CHANNEL
Fall Time 12ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 220mR
Package/Case TSOP
RoHS Compliant Yes
Package Quantity 3000
Number of Channels 1
Turn-On Delay Time 8ns
Turn-Off Delay Time 23ns
Max Power Dissipation 2W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 220mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2.2A
Drain to Source Voltage (Vdss) 60V
Drain-source On Resistance-Max 220mR

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