SI3460DDV-T1-GE3
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Краткое описание:
N-Channel MOSFET, 20V, 7.9A, 28mR Rds On, TSOP
Дополнительная информация
N-channel MOSFET transistor featuring 20V drain-source voltage and 7.9A continuous drain current. Offers low 23mR drain-source resistance and a maximum on-resistance of 28mR. Designed for surface mount applications in a 6-pin TSOP package, with fast switching speeds including 6ns turn-on delay and 8ns fall time. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2.7W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 28mR |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 666pF |
| Threshold Voltage | 400mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 23mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 7.9A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 28mR |
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