SI3467DV-T1-E3

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SI3467DV-T1-E3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 20V 3.8A 54mR TSOP Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel MOSFET with 20V drain-source voltage and 3.8A continuous drain current. Features low 54mΩ drain-to-source resistance and 1.14W maximum power dissipation. Designed for surface mounting in a compact 6-TSOP package, measuring 3.05mm x 1.65mm x 1mm. Operates across a wide temperature range from -55°C to 150°C, with fast switching characteristics including 10ns turn-on delay and 15ns fall time. RoHS compliant and packaged on tape and reel.
RoHS Compliant
Mount Surface Mount
Width 1.65mm
Height 1mm
Length 3.05mm
Series TrenchFET®
Weight 0.000705oz
Polarity P-CHANNEL
Fall Time 15ns
Packaging Tape and Reel
Rds On Max 54mR
Package/Case TSOP
RoHS Compliant Yes
Package Quantity 1
Number of Channels 1
Turn-On Delay Time 10ns
Radiation Hardening No
Turn-Off Delay Time 22ns
Max Power Dissipation 1.14W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 54mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 3.8A
Drain to Source Voltage (Vdss) 20V

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