SI3473CDV-T1-GE3

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SI3473CDV-T1-GE3 - Vishay(Siliconix)
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Краткое описание: P-Channel JFET, 12V, 8A, 22mR, TSOP, Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel, small-signal MOSFET for general-purpose applications. Features 12V drain-source voltage and 8A continuous drain current. Offers low 22mΩ drain-source on-resistance and fast switching times with 10ns turn-on and 62ns turn-off delays. Housed in a compact TSOP package, this surface-mount component operates from -55°C to 150°C with a maximum power dissipation of 4.2W. Halogen-free and RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 1.65mm
Height 1mm
Length 3.05mm
Series TrenchFET®
Weight 0.000705oz
Polarity P-CHANNEL
Fall Time 35ns
Packaging Tape and Reel
Rds On Max 22mR
Package/Case TSOP
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 2.01nF
Number of Channels 1
Turn-On Delay Time 10ns
Radiation Hardening No
Turn-Off Delay Time 62ns
Max Power Dissipation 4.2W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 22mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 8A
Drain to Source Voltage (Vdss) 12V

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