SI3495DV-T1-E3

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SI3495DV-T1-E3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET, -20V, 5.3A, 24mR, TSOP, Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (END OF LIFE)

Дополнительная информация

P-channel MOSFET, 20V drain-source voltage, 5.3A continuous drain current, and 24mΩ maximum drain-source on-resistance. Features a 6-TSOP surface mount package with a 1.1W maximum power dissipation. Operates from -55°C to 150°C, with fast switching speeds including 19ns turn-on delay and 36ns fall time. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Polarity P-CHANNEL
Fall Time 36ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 24mR
Nominal Vgs -750mV
Package/Case TSOP
RoHS Compliant Yes
Package Quantity 3000
Threshold Voltage -750mV
Turn-On Delay Time 19ns
Radiation Hardening No
Turn-Off Delay Time 200ns
Reach SVHC Compliant Unknown
Max Power Dissipation 1.1W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 24mR
Gate to Source Voltage (Vgs) 5V
Continuous Drain Current (ID) 5.3A
Drain to Source Voltage (Vdss) -20V
Drain-source On Resistance-Max 24mR

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