SI3499DV-T1-GE3
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Краткое описание:
P-CH MOSFET 8V 5.3A 23mR TSOP Surface Mount
Дополнительная информация
P-channel MOSFET, 8V drain-source voltage, 5.3A continuous drain current, and 23mΩ drain-source on-resistance. Features a TSOP package for surface mounting, operating from -55°C to 150°C. Includes fast switching times with turn-on delay of 27ns and fall time of 110ns. RoHS compliant with a maximum power dissipation of 1.1W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| Polarity | P-CHANNEL |
| Fall Time | 110ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 23mR |
| Nominal Vgs | -350mV |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Threshold Voltage | -350mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 27ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 210ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 23mR |
| Gate to Source Voltage (Vgs) | 5V |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Voltage (Vdss) | -8V |
| Drain-source On Resistance-Max | 23mR |
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