SI3552DV-T1-E3
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Краткое описание:
N/P-CH JFET 30V 2.5A/1.8A 175mR TSOP SMT
Дополнительная информация
Dual N-Channel and P-Channel MOSFETs in a 6-pin TSOP package, designed for surface mounting. Features a 30V drain-source breakdown voltage and a continuous drain current of 2.5A for the N-channel and 1.8A for the P-channel. Offers a low drain-source on-resistance of 175mΩ (max 200mΩ) and a threshold voltage of 1V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.15W. Fast switching speeds are supported with turn-on delay times of 8ns and fall times of 7ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 7ns |
| Packaging | Tape and Reel |
| Rds On Max | 105mR |
| Nominal Vgs | 1V |
| Package/Case | TSOP |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.15W |
| Threshold Voltage | 1V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.15W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 175mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 200mR |
| Drain to Source Breakdown Voltage | 30V |
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