SI3585DV-T1-E3
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Краткое описание:
N/P-Channel JFET, 20V, 2A, TSOP, Surface Mount
Дополнительная информация
Dual-channel N-channel and P-channel small-signal MOSFET in a TSOP package. Features a 20V drain-source voltage, 2A continuous drain current, and a maximum power dissipation of 830mW. Offers a low drain-source on-resistance of 125mR and a threshold voltage of 600mV. Designed for surface mounting with a compact 3.1mm x 1.7mm x 1mm footprint. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.7mm |
| Height | 1mm |
| Length | 3.1mm |
| Series | TrenchFET® |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 34ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 125mR |
| Nominal Vgs | 600mV |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Threshold Voltage | 600mV |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 830mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 200mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 200MR |
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