SI3590DV-T1-E3
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Краткое описание:
N/P-CH MOSFET 30V 2.5A 170mR TSOP SMT
Дополнительная информация
Dual N-channel and P-channel MOSFET with 30V drain-source voltage. Features low 170mΩ drain-source on-resistance at 10V Vgs, 2.5A continuous drain current, and 830mW power dissipation. Surface mount TSOP package with 1.65mm width, 3.05mm length, and 1mm height. Operates from -55°C to 150°C, with fast switching times including 5ns turn-on delay and 15ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 77mR |
| Nominal Vgs | 600mV |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Number of Channels | 2 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 830mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 170mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 170MR |
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