SI3805DV-T1-GE3
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Краткое описание:
P-CH MOSFET, -20V, 3A, 84mR Rds On, TSOP
Дополнительная информация
P-Channel MOSFET, 20V Drain-Source Voltage (Vdss), 3A Continuous Drain Current (ID), and 84mΩ Max Drain-Source On-Resistance (Rds On Max). Features a 1.1W Max Power Dissipation, 12V Gate-Source Voltage (Vgs), and 330pF Input Capacitance. Operates from -55°C to 150°C with a -1.5V Threshold Voltage. Packaged in a 6-TSOP for surface mounting, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | LITTLE FOOT® |
| Weight | 0.000705oz |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 84mR |
| Nominal Vgs | -1.5V |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 330pF |
| Power Dissipation | 1.1W |
| Threshold Voltage | -1.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 84mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 84mR |
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