SI3850ADV-T1-E3
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Краткое описание:
N/P-Channel JFET, 20V, 1.4A, 640mR, TSOP, Surface Mount
Дополнительная информация
N and P-channel dual FET for general-purpose small signal applications. Features 20V drain-source voltage and 1.4A continuous drain current. Offers low 300mΩ drain-source on-resistance and fast 18ns turn-off delay. Packaged in a compact TSOP surface-mount case, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 34ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 300mR |
| Nominal Vgs | 1.5V |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Threshold Voltage | 1.5V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.08W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 640mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1.4A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 640MR |
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