SI3853DV-T1-E3

Снят с производства
SI3853DV-T1-E3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 20V 1.6A 200mR TSOP Surface Mount
Производитель Vishay(Siliconix)
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel MOSFET featuring 20V drain-source breakdown voltage and 1.6A continuous drain current. Surface mountable in a 6-TSOP package, this component offers 200mΩ drain-source resistance at a nominal gate-source voltage of -500mV. Operating temperature range spans -55°C to 150°C with a maximum power dissipation of 830mW. Fast switching characteristics include a 11ns turn-on delay and 19ns turn-off delay.
RoHS Compliant
Mount Surface Mount
Series LITTLE FOOT®
Polarity P-CHANNEL
Fall Time 34ns
Packaging Tape and Reel
Rds On Max 200mR
Nominal Vgs -500mV
Package/Case TSOP
RoHS Compliant Yes
Package Quantity 3000
Power Dissipation 830mW
Threshold Voltage -500mV
Turn-On Delay Time 11ns
Radiation Hardening No
Turn-Off Delay Time 19ns
Reach SVHC Compliant Unknown
Max Power Dissipation 830mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 200mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 1.6A
Drain to Source Voltage (Vdss) -20V
Drain to Source Breakdown Voltage 20V

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