SI3900DV-T1-E3
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Краткое описание:
N-Channel JFET, 20V, 2A ID, 125mR Rds On, TSOP
Дополнительная информация
N-Channel Silicon FET, 2-Element, Surface Mount TSOP package. Features 20V Drain to Source Breakdown Voltage (Vdss) and 2A Continuous Drain Current (ID). Offers 125mR Max Drain-Source On Resistance (Rds On) and 600mV Threshold Voltage. Operates from -55°C to 150°C with 830mW Max Power Dissipation. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 125mR |
| Nominal Vgs | 600mV |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 830mW |
| Threshold Voltage | 600mV |
| Number of Channels | 2 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 830mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 125mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 125mR |
| Drain to Source Breakdown Voltage | 20V |
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