SI3932DV-T1-GE3
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Краткое описание:
N-Channel JFET, 30V, 3.7A ID, 58mR Rds On, TSOP
Дополнительная информация
N-Channel Silicon JFET, 2-element, surface mount transistor in a TSOP package. Features 30V drain-source voltage (Vdss), 3.7A continuous drain current (ID), and a maximum drain-source on-resistance (Rds On) of 58mR. Operates with a gate-to-source voltage (Vgs) up to 20V and a nominal Vgs of 1.2V. Offers fast switching with 10ns turn-on and turn-off delay times. Compliant with HALOGEN FREE and ROHS standards, with a maximum power dissipation of 1.4W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 1.1mm |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 58mR |
| Nominal Vgs | 1.2V |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 235pF |
| Threshold Voltage | 2.2V |
| Number of Channels | 2 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 10ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 47mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 58MR |
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