SI3948DV-T1-E3
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Краткое описание:
2 N-CH JFET 30V 2.5A 105mR TSOP Surface Mount
Дополнительная информация
N-Channel Junction Field-Effect Transistor (JFET) with 30V Drain-to-Source Voltage (Vdss) and 2.5A Continuous Drain Current (ID). Features low 105mR Drain-to-Source Resistance (Rds On Max) and operates with a Gate-to-Source Voltage (Vgs) up to 20V. This surface mount component, packaged in TSOP, offers fast switching with a 7ns turn-on delay and 9ns fall time. It supports a maximum power dissipation of 1.15W and is RoHS compliant, suitable for operation between -55°C and 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 105mR |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.15W |
| Number of Channels | 2 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13ns |
| Max Power Dissipation | 1.15W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 105mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Voltage (Vdss) | 30V |
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