SI3993DV-T1-E3
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Краткое описание:
P-CH JFET, 30V, 1.8A, 2CH, 133mR RdsOn, TSOP
Дополнительная информация
P-channel, 2-channel JFET transistor for general-purpose small signal applications. Features a 30V drain-source voltage rating and 1.8A continuous drain current. Offers a low 133mΩ maximum drain-source on-resistance. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 830mW. Packaged in a compact TSOP surface-mount case, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| Polarity | P-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 133mR |
| Nominal Vgs | -3V |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Number of Channels | 2 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 830mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 133mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 133mR |
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