SI4056DY-T1-GE3
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Краткое описание:
N-CH Power MOSFET 100V 11.1A 8-Pin SOIC N
Дополнительная информация
N-channel Power MOSFET featuring TrenchFET technology for enhanced performance. This single-element device offers a maximum drain-source voltage of 100V and a continuous drain current of 11.1A. It is housed in an 8-pin SOIC N surface-mount package with gull-wing leads, a 1.27mm pin pitch, and a maximum package length of 5mm. Key electrical characteristics include a maximum drain-source on-resistance of 23mΩ at 10V and a typical gate charge of 19.6nC at 10V.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | MS-012AA |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | SOIC N |
| AEC Qualified | No |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 4(Max) |
| Process Technology | TrenchFET |
| Package Description | Small Outline IC Narrow Body |
| Package Family Name | SOP |
| Package Height (mm) | 1.55(Max) |
| Package Length (mm) | 5(Max) |
| Seated Plane Height (mm) | 1.75(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 19.6nC |
| Typical Gate Charge @ Vgs | 19.6@10V|[email protected]nC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Threshold Voltage | 2.8V |
| Maximum Drain Source Resistance | 23@10VmOhm |
| Typical Input Capacitance @ Vds | 900@50VpF |
| Maximum Continuous Drain Current | 11.1A |
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