SI4062DY-T1-GE3
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Краткое описание:
MOSFET 60V 4.2mOhm@10V 32.1A N-CH
Дополнительная информация
MOSFET 60V 4.2mOhm@10V 32.1A N-CH
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 4.2mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 3.175nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 52ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 7.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 32.1A |
| Drain to Source Voltage (Vdss) | 60V |
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