SI4090DY-T1-GE3
Производится
Увеличить
Краткое описание:
N-CH JFET 100V 19.7A 10mR SO Surface Mount Transistor
Дополнительная информация
N-channel TrenchFET® general-purpose small-signal transistor in SO package. Features 100V drain-source voltage (Vdss), 19.7A continuous drain current (ID), and 10mΩ drain-source on-resistance (Rds On Max). Operates from -55°C to 150°C with a maximum power dissipation of 7.8W. Surface mountable with 2.41nF input capacitance and 2V threshold voltage. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 10mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.41nF |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 7.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 19.7A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 10MR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
