SI4100DY-T1-GE3
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Краткое описание:
N-CH MOSFET 100V 4.4A 60mR SOIC N
Дополнительная информация
N-channel MOSFET, 100V Vdss, 4.4A continuous drain current, 60mR Rds On. Features 2V threshold voltage, 1.71nF input capacitance, and 10ns turn-on delay. Packaged in an 8-pin SOIC N surface mount package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 2.7W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 60mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.71nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 63mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Voltage (Vdss) | 100V |
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