SI4102DY-T1-GE3
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Краткое описание:
100V 2.7A N-CH JFET SOIC Surface Mount
Дополнительная информация
N-channel MOSFET, surface mount, 100V Drain-to-Source Voltage (Vdss), 2.7A Continuous Drain Current (ID), and 158mΩ Drain to Source Resistance (Rds On Max). Features include a 2V Threshold Voltage, 370pF Input Capacitance, and 10ns Turn-On Delay Time. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 4.8W. Packaged in a 5mm x 4mm SOIC case, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 158mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 370pF |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 4.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 158mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Voltage (Vdss) | 100V |
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