SI4114DY-T1-GE3
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Краткое описание:
N-CH JFET 20V 15.2A 6mR SOIC N
Дополнительная информация
N-channel MOSFET, 20V Vdss, 15.2A continuous drain current, and 6mR drain-source on-resistance. This surface-mount component features a 3.7nF input capacitance and 2.1V threshold voltage. Operating across a -55°C to 150°C temperature range, it offers 30ns turn-on and 60ns turn-off delay times. Packaged in an 8-pin SOIC N for tape and reel, this RoHS compliant device is designed for efficient power management.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 3.7nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 2.1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 15.2A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 6MR |
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