SI4116DY-T1-E3
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Краткое описание:
N-CH JFET 25V 12.7A 8.6mR SOIC N
Дополнительная информация
N-channel MOSFET, 25V Vdss, 12.7A continuous drain current, and 8.6mR drain-source on-resistance. Features a 1.55mm height, 5mm length, and 4mm width SO package for surface mounting. Operates from -55°C to 150°C with a 5W max power dissipation. Includes 13ns turn-on delay and 15ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8.6mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.925nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Max Power Dissipation | 5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.6mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 12.7A |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 8.6MR |
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