SI4116DY-T1-GE3
Производится
Увеличить
Краткое описание:
N-CH MOSFET 25V 12.7A 8.6mR SOIC Surface Mount
Дополнительная информация
N-channel MOSFET, 25V Vdss, 12.7A continuous drain current, and 8.6mR drain-source on-resistance. Features a 1.4V nominal Vgs, 600mV threshold voltage, and 1.925nF input capacitance. Operates within a -55°C to 150°C temperature range with 5W max power dissipation. Packaged in an 8-pin SOIC surface mount configuration, tape and reel, with lead-free and RoHS compliance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8.6mR |
| Nominal Vgs | 1.4V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.925nF |
| Threshold Voltage | 600mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.6mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 12.7A |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 8.6mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
