SI4122DY-T1-GE3
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Краткое описание:
N-CH JFET 40V 27.2A 4.5mR SOIC N
Дополнительная информация
N-channel MOSFET, 40V Drain-Source Voltage (Vdss), 27.2A Continuous Drain Current (ID), and 4.5mR Drain-Source On Resistance (Rds On Max). Features include a 2.5V Threshold Voltage, 4.2nF Input Capacitance, 42ns Turn-On Delay Time, and 28ns Fall Time. Packaged in an 8-pin SOIC N surface mount package, this component operates from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 28ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.5mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 4.2nF |
| Threshold Voltage | 2.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 42ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.5mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 27.2A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 4.5MR |
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