SI4124DY-T1-GE3

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SI4124DY-T1-GE3 - Vishay(Siliconix)
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Краткое описание: N-CH JFET 40V 13.6A 7.5mR SOIC Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel MOSFET, surface mount, 40V drain-to-source voltage, 13.6A continuous drain current, and 7.5mΩ drain-to-source resistance. Features include 11ns fall time, 30ns turn-on delay, and 38ns turn-off delay. Operates from -55°C to 150°C with a maximum power dissipation of 5.7W. Packaged in an 8-SOIC case, this RoHS compliant component offers 3.54nF input capacitance.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.55mm
Length 5mm
Series TrenchFET®
Weight 0.006596oz
Polarity N-CHANNEL
Fall Time 11ns
Packaging Tape and Reel
Rds On Max 7.5mR
Package/Case SOIC
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 3.54nF
Number of Channels 1
Turn-On Delay Time 30ns
Radiation Hardening No
Turn-Off Delay Time 38ns
Max Power Dissipation 5.7W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 7.5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 13.6A
Drain to Source Voltage (Vdss) 40V

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