SI4128DY-T1-E3

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SI4128DY-T1-E3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 30V 10.9A 24mR SO Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

N-channel MOSFET with 30V drain-source voltage and 10.9A continuous drain current. Features low 24mΩ drain-to-source resistance and 5W maximum power dissipation. Operates across a -55°C to 150°C temperature range. This surface-mount component is packaged in an 8-pin SOIC for tape and reel delivery.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.5mm
Length 5mm
Series TrenchFET®
Weight 0.006596oz
Polarity N-CHANNEL
Fall Time 10ns
Packaging Tape and Reel
Rds On Max 24mR
Package/Case SO
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 435pF
Number of Channels 1
Turn-On Delay Time 5ns
Radiation Hardening No
Turn-Off Delay Time 15ns
Max Power Dissipation 5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 24mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 10.9A
Drain to Source Voltage (Vdss) 30V

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