SI4134DY-T1-E3

Производится
SI4134DY-T1-E3 - Vishay(Siliconix)
Увеличить
Краткое описание: N-CH MOSFET 30V 14A 14mR SOIC Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

N-channel MOSFET, 30V Vdss, 14A continuous drain current, and 14.5mΩ drain-source resistance. Features low on-resistance, 9ns turn-on delay, and 14ns turn-off delay. Packaged in an 8-pin SOIC surface-mount case, this component operates from -55°C to 150°C with a maximum power dissipation of 5W. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.5mm
Length 5mm
Series TrenchFET®
Weight 0.006596oz
Polarity N-CHANNEL
Fall Time 8ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 14mR
Package/Case SOIC
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 846pF
Number of Channels 1
Turn-On Delay Time 9ns
Radiation Hardening No
Turn-Off Delay Time 14ns
Max Power Dissipation 5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 14.5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 14A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 14mR

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.