SI4134DY-T1-GE3
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Краткое описание:
N-Channel JFET, 30V, 14A ID, 14mR Rds(on), SOP-8
Дополнительная информация
N-Channel Silicon FET, Surface Mount, SOIC package. Features 30V Drain-to-Source Voltage (Vdss), 14A Continuous Drain Current (ID), and 14mΩ Drain-to-Source On-Resistance (Rds On Max). Operates from -55°C to 150°C with a 1.8V Threshold Voltage. Includes 15ns Turn-On Delay Time and 10ns Fall Time. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 14mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 846pF |
| Threshold Voltage | 1.8V |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 14mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 14MR |
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