SI4136DY-T1-GE3
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Краткое описание:
N-Channel JFET, 20V, 46A ID, 1.95mR Rds(on), SOIC
Дополнительная информация
N-Channel Silicon JFET, surface mount, featuring a 20V Drain-to-Source Voltage (Vdss) and 46A Continuous Drain Current (ID). This component offers a low Drain to Source Resistance of 1.95mR and a Threshold Voltage of 1V. Designed for surface mounting in an SO package, it operates across a wide temperature range from -55°C to 150°C with a Max Power Dissipation of 7.8W. It is HALOGEN FREE and ROHS COMPLIANT.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 23ns |
| Packaging | Tape and Reel |
| Rds On Max | 2mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 4.56nF |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 34ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 7.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.95mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 46A |
| Drain to Source Voltage (Vdss) | 20V |
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