SI4154DY-T1-GE3
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Краткое описание:
N-CH MOSFET 40V 36A 2.7mR SOIC Surface Mount
Дополнительная информация
N-channel MOSFET transistor for surface mount applications. Features 40V drain-source voltage (Vdss) and 36A continuous drain current (ID). Offers low 2.7mR drain-to-source resistance and 3.3mR Rds On Max. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 7.8W. Includes 4.23nF input capacitance and fast switching times with 25ns turn-on and 35ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.3mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 4.23nF |
| Threshold Voltage | 2.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 7.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 36A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 3.3MR |
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