SI4162DY-T1-GE3
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Краткое описание:
N-Ch MOSFET, 30V, 7.9mR, 19.3A, SOIC-8, Surface Mount
Дополнительная информация
Single N-Channel Power MOSFET, SOIC-8 package, featuring 30V drain-source voltage and a maximum on-resistance of 7.9mR at 10Vgs. This surface mount device offers a continuous drain current of 19.3A and a low threshold voltage of 1V. Designed for efficient switching, it exhibits typical turn-on delay of 20ns and fall time of 10ns. With a maximum power dissipation of 5W and an operating temperature range of -55°C to 150°C, it is RoHS compliant and packaged in tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7.9mR |
| Nominal Vgs | 1V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.155nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 19.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 7.9mR |
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