SI4164DY-T1-GE3
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Краткое описание:
N-Channel JFET, 30V, 3.2mR Rds(on), 30A ID, SO Package
Дополнительная информация
N-channel, silicon, surface-mount field-effect transistor with a 30V drain-source voltage and 30A continuous drain current. Features a low 3.2mΩ drain-to-source on-resistance and 3.545nF input capacitance. Operates across a -55°C to 150°C temperature range with a 3W power dissipation. Includes 16ns fall time and 35ns turn-on delay time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.2mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 3.545nF |
| Power Dissipation | 3W |
| Threshold Voltage | 2.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 35ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 48ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3.2MR |
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