SI4166DY-T1-GE3
Увеличить
Краткое описание:
N-Channel JFET, 30V, 30.5A ID, 3.9mR Rds(on), SOP-8
Дополнительная информация
N-Channel Silicon Field-Effect Transistor (FET) for small signal applications. Features a 30V Drain-Source Voltage (Vdss) and a maximum continuous drain current of 30.5A. Offers a low Drain-Source On-Resistance (Rds On) of 3.9mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 6.5W. Packaged in an SO-8 surface-mount case and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.9mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.73nF |
| Threshold Voltage | 1.2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 30ns |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 6.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 30.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3.9MR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
