SI4168DY-T1-GE3
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Краткое описание:
N-Channel MOSFET 30V 24A 5.7mR SO Surface Mount
Дополнительная информация
N-channel MOSFET with 30V drain-source voltage and 24A continuous drain current. Features low 6.2mΩ drain-to-source resistance and 5.7W maximum power dissipation. Designed for surface mounting in an SO package, this component offers fast switching speeds with turn-on delay of 25ns and fall time of 15ns. Operating temperature range from -55°C to 150°C, it is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5.7mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.72nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Max Power Dissipation | 5.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Voltage (Vdss) | 30V |
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