SI4172DY-T1-GE3

Производится
SI4172DY-T1-GE3 - Vishay(Siliconix)
Увеличить
Краткое описание: N-CH MOSFET 30V 15A 12mR SO 4.5W
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

N-CHANNEL MOSFET, 30V Vdss, 15A Continuous Drain Current, 12mR Max Drain-Source On Resistance. Features 4.5W Max Power Dissipation, 8ns Turn-On Delay, 8ns Fall Time, and 16ns Turn-Off Delay. Operates from -55°C to 150°C, with 820pF Input Capacitance. Surface mountable in a SO package, this component is RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.5mm
Length 5mm
Series TrenchFET®
Weight 0.006596oz
Polarity N-CHANNEL
Fall Time 8ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 12mR
Package/Case SO
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 820pF
Number of Channels 1
Turn-On Delay Time 8ns
Radiation Hardening No
Turn-Off Delay Time 16ns
Max Power Dissipation 4.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 12mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 15A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 12mR

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.