SI4174DY-T1-GE3
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Краткое описание:
N-Channel JFET, 30V, 17A ID, 9.5mR RDS(on), SOP-8
Дополнительная информация
N-Channel Silicon MOSFET for small signal applications, featuring a 30V drain-source voltage (Vdss) and 17A continuous drain current (ID). This surface-mount device offers a low drain-source on-resistance (Rds On) of 9.5mR, with a threshold voltage of 1V. It operates across a wide temperature range from -55°C to 150°C and boasts fast switching times with a turn-on delay of 14ns and fall time of 9ns. Packaged in a compact SOP-8 (SO) case, this component is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 9.5mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 985pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 9.5MR |
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