SI4178DY-T1-GE3
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Краткое описание:
N-Channel JFET, 30V, 12A ID, SOIC, Surface Mount
Дополнительная информация
N-Channel Silicon JFET, Surface Mount, SOIC-8 package. Features 30V Drain-Source Voltage (Vdss), 12A Continuous Drain Current (ID), and a maximum Drain-Source On Resistance (Rds On) of 21mR. Offers a nominal Gate-Source Voltage (Vgs) of 1.4V and a Threshold Voltage of 2.8V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 5W. Includes fast switching characteristics with a turn-on delay time of 20ns and a fall time of 10ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 21mR |
| Nominal Vgs | 1.4V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 405pF |
| Power Dissipation | 2.4W |
| Threshold Voltage | 2.8V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 17mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 21mR |
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