SI4204DY-T1-GE3
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Краткое описание:
2-Ch N-Ch JFET, 20V, 19.8A ID, 3.8mR RdsOn, SO, SM
Дополнительная информация
N-Channel Silicon JFET, 2-Element, Surface Mount, SOP-8 package. Features 20V Drain to Source Voltage (Vdss), 19.8A Continuous Drain Current (ID), and 3.8mR Drain to Source Resistance. Operates from -55°C to 150°C with a 3.25W Max Power Dissipation. Includes 1V Threshold Voltage and 2.11nF Input Capacitance. RoHS Compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Packaging | Tape and Reel |
| Rds On Max | 4.6mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 2.11nF |
| Threshold Voltage | 1V |
| Number of Channels | 2 |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 19.8A |
| Drain to Source Voltage (Vdss) | 20V |
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