SI4214DDY-T1-GE3
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Краткое описание:
N-Channel JFET, 30V, 8.5A ID, 2-Element, SO Package
Дополнительная информация
N-Channel Silicon FET, 2-Element, Surface Mount SOP-8 package. Features 30V Drain to Source Breakdown Voltage, 8.5A Continuous Drain Current, and 19.5mR Max Drain-Source On Resistance. Operates from -55°C to 150°C with 3.1W Max Power Dissipation. Includes 2 N-Channel elements, 2.5V Threshold Voltage, and 660pF Input Capacitance. HALOGEN FREE AND ROHS COMPLIANT.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 19.5mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 660pF |
| Power Dissipation | 2W |
| Threshold Voltage | 2.5V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 14ns |
| Turn-Off Delay Time | 18ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 19.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 19.5mR |
| Drain to Source Breakdown Voltage | 30V |
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