SI4214DY-T1-GE3
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Краткое описание:
30V 6.8A N-CH MOSFET SO 23.5mR
Дополнительная информация
Dual N-channel MOSFET, 30V Vdss, 6.8A continuous drain current, and 23.5mΩ maximum drain-source on-resistance. Features fast switching speeds with 13ns turn-on delay and 9ns fall time, and 785pF input capacitance. Operates from -55°C to 150°C with 3.1W maximum power dissipation. Surface mountable in an 8-SOIC package, this RoHS compliant component is ideal for power management applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 23.5mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 785pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18ns |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 23.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.8A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 23.5mR |
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