SI4228DY-T1-GE3
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Краткое описание:
N-Channel JFET, 25V, 8A ID, 18mR Rds On, SOP-8
Дополнительная информация
N-Channel Silicon MOSFET, 2-element, surface mount device in an SOP-8 package. Features 25V drain-source voltage, 8A continuous drain current, and 18mΩ maximum drain-source on-resistance. Operates with a gate-source voltage up to 12V and exhibits a nominal Vgs of 600mV. Includes 790pF input capacitance, 7ns turn-on delay, and 21ns turn-off delay. This component is RoHS compliant and designed for efficient switching applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 18mR |
| Nominal Vgs | 600mV |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 790pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 15mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 18MR |
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