SI4324DY-T1-E3
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Краткое описание:
30V 24A N-CH MOSFET SOIC N 3.2mR RdsOn
Дополнительная информация
N-channel MOSFET with 30V drain-source breakdown voltage and 24A continuous drain current. Features low 3.2mΩ drain-source on-resistance and 7.8W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in an 8-pin SOIC N surface-mount package, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.157inch |
| Height | 0.061inch |
| Length | 0.196inch |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.2mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 3.51nF |
| Power Dissipation | 3.5W |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Max Power Dissipation | 7.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3.2mR |
| Drain to Source Breakdown Voltage | 30V |
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