SI4346DY-T1-E3
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Краткое описание:
N-CH MOSFET 30V 5.9A 23mR SOIC
Дополнительная информация
N-channel MOSFET featuring 30V drain-source voltage and 5.9A continuous drain current. Offers a low 23mΩ drain-source on-resistance at 10V gate-source voltage. This surface-mount component, housed in a SOIC package, operates within a -55°C to 150°C temperature range with a maximum power dissipation of 1.31W. Key switching characteristics include a 9ns turn-on delay and 11ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 23mR |
| Nominal Vgs | 2V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.31W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.31W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 23mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 5.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 23mR |
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