SI4368DY-T1-E3
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Краткое описание:
30V 17A N-CH MOSFET SO 3.2mR RdsOn
Дополнительная информация
N-channel MOSFET with 30V drain-source breakdown voltage and 17A continuous drain current. Features 3.2mΩ maximum drain-source on-resistance and 1.6W power dissipation. Operates from -55°C to 150°C, packaged in an 8-SOIC surface-mount case. Includes 25ns turn-on delay and 172ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Packaging | Tape and Reel |
| Rds On Max | 3.2mR |
| Package/Case | SO |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 8.34nF |
| Power Dissipation | 1.6W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 172ns |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.2mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3.2mR |
| Drain to Source Breakdown Voltage | 30V |
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