SI4378DY-T1-GE3
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Краткое описание:
N-CH JFET 20V 19A 2.7mR SO Tape & Reel
Дополнительная информация
N-channel MOSFET, surface mount, SO package, featuring 20V Drain to Source Voltage (Vdss) and 19A Continuous Drain Current (ID). Offers low 2.7mR Drain to Source Resistance (Rds On Max) and 1.6W Max Power Dissipation. Operates across a -55°C to 150°C temperature range with 8.5nF Input Capacitance. Packaged in tape and reel, this RoHS compliant component is designed for efficient switching applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 65ns |
| Packaging | Tape and Reel |
| Rds On Max | 2.7mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 8.5nF |
| Threshold Voltage | 1.8V |
| Number of Channels | 1 |
| Turn-On Delay Time | 85ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 140ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 27mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Voltage (Vdss) | 20V |
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