SI4401BDY-T1-GE3
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Краткое описание:
P-Channel JFET, 40V, 8.7A ID, 14mR Rds On, SO Package
Дополнительная информация
P-channel, silicon, surface-mount JFET with a continuous drain current of 8.7A and a drain-to-source voltage of -40V. Features a low drain-source on-resistance of 14mΩ, a threshold voltage of -3V, and fast switching times with a turn-on delay of 16ns and fall time of 15ns. This 1-element transistor operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.5W. Packaged in a RoHS compliant SOP-8 (SO) package, suitable for tape and reel mounting.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 14mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 97ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 14mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.7A |
| Drain to Source Voltage (Vdss) | -40V |
| Drain-source On Resistance-Max | 14MR |
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