SI4401DDY-T1-GE3
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Краткое описание:
P-CH MOSFET, -40V, -16.1A, 15mR Rds On, SOIC
Дополнительная информация
P-channel MOSFET transistor, surface mount, 8-pin SOIC package. Features -40V drain-source voltage (Vdss) and -16.1A continuous drain current (ID). Offers low drain-source on-resistance (Rds On) of 12mR at a gate-source voltage (Vgs) of 10V. Maximum power dissipation is 6.3W, with a threshold voltage of -1.2V. RoHS compliant and operates across a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 15mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 3.007nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | -1.2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 6.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 12mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | -16.1A |
| Drain to Source Voltage (Vdss) | -40V |
| Drain-source On Resistance-Max | 15mR |
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