SI4404DY-T1-E3
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Краткое описание:
N-Channel JFET, 30V, 15A ID, 6.5mR Rds(on), SOIC
Дополнительная информация
N-Channel Silicon MOSFET, TrenchFET® series, designed for surface mounting in an SOIC package. Features a continuous drain current of 15A and a drain-to-source voltage of 30V. Offers a low drain-source on-resistance of 6.5mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.6W. Includes a nominal gate-to-source voltage of 1V and an input capacitance of 2nF. This component is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6.5mR |
| Nominal Vgs | 1V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 2nF |
| Power Dissipation | 1.6W |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 105ns |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 6.5mR |
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