SI4406DY-T1-E3
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Краткое описание:
N-Channel JFET, 30V, 13A, 4.5mR Rds(on), SO-8
Дополнительная информация
N-channel silicon MOSFET, surface mountable in an SO-8 package. Features a continuous drain current of 13A, drain-to-source voltage of 30V, and a low on-resistance of 4.5mΩ. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 1.6W. Includes fast switching characteristics with turn-on delay time of 21ns and fall time of 15ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.91mm |
| Height | 3.18mm |
| Length | 4.88mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Packaging | Tape and Reel |
| Rds On Max | 4.5mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1.6W |
| Number of Channels | 1 |
| Turn-On Delay Time | 21ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 100ns |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Voltage (Vdss) | 30V |
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